Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients

Investigation of Efficiency Droop for InGaN-based LEDs with Carrier Localization State and Polarization Effect

We prepared wavelength-dependent InGaN-based light emitting diodes (LEDs) with peak emissions ranging from 400 to 445 nm, and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the emissions of the wavelength-dependent InGaN LEDs underwent blue shifts at elevated currents. In addition, although the external quantum efficiencies (EQEs) changed d...

Impact of carrier localization on radiative recombination times in semipolar

evaluation of sadr eminence in safavid period

چکیده: یکی از دوره های مهم تاریخی ایران به لحاظ تأمین استقلال ملی مذهبی و حتی تأثیر آن بر فرهنگ و مذهب ایرانیان، دوره صفویه است. رسمیت دادن و رواج مذهب شیعه توسط شاه اسماعیل اول، یکی از مهمترین اقدامات این دولت محسوب می شود. بنابراین برای اجرای این سیاست، وی منصب صدارت را به عنوان منصبی مذهبی- حکو متی ایجاد کرد .این منصب از دوره ی تیموریان ایجاد شده بود ولی در اواخر این دوره اهمیت بیشتری یافت...

High-Power, Low-Efficiency-Droop Semipolar (20\bar{2}\bar{1}) Single-Quantum-Well Blue Light-Emitting Diodes

We demonstrate a small-area (0.1mm) semipolar (20 2 1) blue (447 nm) light-emitting diode (LED) with high light output power (LOP) and external quantum efficiency (EQE) by utilizing a single 12-nm-thick InGaN quantum well. The LED had pulsed LOPs of 140, 253, 361, and 460mW, and EQEs of 50.1, 45.3, 43.0, and 41.2%, at current densities of 100, 200, 300, and 400A/cm, respectively. The device sho...

evaluation of fat atrophy in patients with dermis fat graft of orbit by ct-scan

چکیده ندارد.